2026-09-23
2:30 PM - 4:00 PM
CB1217
vent Details
- Time：14:30-16:00,23rd Septempber(Wednesday),2026
- Venue: XJTLU Centre Campus, Centre Building-CB1217, 111 Ren'ai Road, Dushu Lake Higher Education Town, SIP, Suzhou, Jiangsu, China
- Language: Chinese(IFlytek translation provided)
- Host：XJTLU ASRC & XJLTU AIAT
Invited speaker
Yuhao Zhang Professor
Prof. Yuhao Zhang is currently a Full Professor with the Department of Electrical and Computer Engineering of the University of Hong Kong (HKU). He also serves as the Associate Director of the HKU Centre for Advanced Semiconductors and Integrated Circuits. Before joining HKU, he was the Shirish S. Sathaye Associate Professor with Virginia Tech, leading the power semiconductor research at the Center for Power Electronics Systems, the largest academic research center in power electronics in the U.S. He received his Ph. D. and S. M., both in electrical engineering from Massachusetts Institute of Technology (MIT) in 2017 and 2013, respectively, as well as his B. S. in physics from Peking University in 2011. He has authored over 200 papers (including 7 Nature/Science-series papers, 21 IEDM papers, 20+ T-PEL papers as the corresponding author) and 2 book chapters and holds 9 granted U. S. patents. He is a co-author of over 10 highlight/feature/prize papers. His work has been cited over 14,000 times with a h-index of 61 and been widely covered by Nature Electronics, Semiconductor Today, Compound Semiconductors, EE Times, etc. over 100 times.
He currently serves as the Chair of the Power Devices and ICs Technical Committee of the IEEE Electron Device Society, an Associate Editor-in-Chief for IEEE Electron Device Letters, an Associate Editor for IEEE Transactions on Power Electronics, and the TPC member of many conferences (e.g., IEDM, APEC, WiPDA). He received the MIT Microsystems Technology Laboratories Doctoral Dissertation Award, two IEEE George Smith Awards (best paper award of the year in IEEE Electron DeAward, thes), four Technical Highlights of IEEE International Electron Devices Meeting (IEDM), IEEE William M. Portnoy 1st Prize Paper Award, the National Science Foundation CAREER Award, the Outstanding New Assistant Professor Award and Faculty Fellow Award of Virginia Tech, the Office of Naval Research Young Investigator Award, the Compound Semiconductor Week Young Scientist Award, and the He Xiang Jian Young Scientist Award. His students received the Ph.D. Thesis Talk Award of the IEEE Power Electronics Society and several APEC Best Presentation Awards.
Abstract
Wide-bandgap (3rd-generation) and ultra-wide-bandgap (4th-generation) semiconductors are fundamentally transforming the landscape of power electronics. While Gallium Nitride (GaN) has achieved commercial success in the 30–900 V range, massive untapped potential remains at both the lower (<30 V) and upper (>1 kV) voltage extremes. This talk first explores the expanding frontier of GaN technology, highlighting emerging architectures, monolithic integration, and transformative applications ranging from AI processor power delivery to electric vehicles and aerospace systems.
Simultaneously, Gallium Oxide (Ga2O3) is rapidly maturing as a premier ultra-wide-bandgap candidate for extreme-power applications. We will discuss our recent exploration of Ga2O3 devices for high-temperature high-voltage applications, achieving >10 kV breakdown voltages and 250 oC operation stability. To address the inherent thermal challenges of Ga2O3, we will also detail advanced device-packaging co-design that have enabled megawatt-class Ga2O3 power modules for pulsed power electronics.
Overall, we present coordinated innovations in fundamental device physics, emerging semiconductor materials, reliability engineering, and advanced packaging to extend the frontier of next-generation power electronics.
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