Chun Zhao


Dr. Chun ZHAO (Gary) received his BEng degree in 2006 from Southeast University 東南大學 in Nanjing. He completed his MSc degree in 2007 at Hong Kong University of Science and Technology (HKUST).

From 2007 to 2009, Gary joined in a Hong Kong start-up technology company Minilogic as a development team member to be involved into IC design. He applied his expertise in CMOS analog and digital system architecture to enable the deployment of the world's first electronic cigarette with ASIC integrated core.

Gary was enrolled as a PhD student in University of Liverpool in 2009 and obtained the PhD degree in 2014. After graduation, he moved back to HKUST and was a senior research engineer in Nano and Advanced Materials Institute from 2014 to 2017. The research group, Gary used to work as a key staff member, is one of the most active teams in bridging academic and industry to implement technology commercialization. After three years of research experiences, he decided to return to academia full-time by joining EEE department in 2017.

His research covers a broad area in emerging electronic devices ranging from process development to device design, characterization, and application. Gary is the one of major contributors to 3 US patents. He has contributed to more than 150 peer-reviewed journal/conference papers/presentations and some of them have been cited by Nature Reviews Materials (76.67), Nature Materials (47.65), Nature Electronics (33.25), Nature Communication (17.69), Science Advance (14.95), Advanced Materials (32.08). He was the leading author/scientist of research work with highly cited among worldwide top 1% from ESI.

Gary is serving as the publication chair of The 17th & 18th IEEE International Conference on IC Design and Technology (ICICDT 2019 & 2021). He was nominated/awarded into the 2018 Jiangsu Province High-level Innovation and Entrepreneurship Talent Plan. From 2020 to 2022, Gary has been selected and awarded as Golden Reviewer for the IEEE Electron Devices Society upon his expertise in 3rd/4th genearation semiconductor.

The research group is seeking highly motivated PhD candidate who has solid background in EE, Materials Science, Chemistry, or other related fields. The interested applicant with strong motivation to perform cutting edge research is highly encouraged to contact me via or
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  • 电话

    +86 (0)51288161402
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  • 地址

    SC342(SIP Campus-Science Building)
    Suzhou Dushu Lake Science and Education Innovation District
    Suzhou Industrial Park

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