Register Event Details
- Time：15:30-17:00,21st May(Thursday),2026
- Venue: Engineering Building-EB574, XJTLU Centre Campus, 111 Ren'ai Road, Dushu Lake Higher Education Town, SIP, Suzhou, Jiangsu, China
- Language: Chinese(IFlytek translation provided)
- Host：XJTLU Advanced Semiconductor Research Centre(ASRC)
Invited speaker
Jiandong Ye Professor
Prof. Jiandong Ye is a Professor and PhD Supervisor at Nanjing University. He received his B.S. (2002) and Ph.D. (2006) degrees from the same institution. From 2006 to 2015, he served as a Senior Research Engineer at the Institute of Microelectronics (IME), Singapore, and subsequently as a QE II Fellow at The Australian National University. He returned to the School of Electronic Science and Engineering at Nanjing University as a Professor in 2010.
His research focuses on ultra-wide bandgap semiconductor materials and devices, with a specialization in gallium oxide (Ga₂O₃). In the past five years, he has published over 80 high-level papers as a corresponding author, authored/co-authored 4 monographs, and holds 14 authorized invention patents. He has led numerous national and provincial projects, including the National Key R&D Program, NSFC Distinguished Young Scholar/Key/Excellent Young Scholar Projects, Jiangsu Province Distinguished Young Scholar Program, Jiangsu Province Major Science and Technology Special Project, and Jiangsu Province Key R&D Program. He was awarded the Second Prize of Jiangsu Provincial Science and Technology Award (First Completer) and the Australian QE II Fellowship Research Award..
Abstract
Gallium oxide (Ga₂O₃) stands as a prominent representative of ultra-wide bandgap (UWBG) semiconductor materials. It possesses superior material properties including a large bandgap, high critical breakdown field, and high saturation velocity, making it an advanced strategic electronic material for next-generation high-power electronic devices.
In recent years, driven by the maturation of single-crystal substrate fabrication and n-type epitaxial doping technologies, Ga₂O₃ has witnessed rapid development in the power electronics sector. Certain device performance metrics have already surpassed the theoretical limits of Silicon Carbide (SiC), fully demonstrating the immense potential of Ga₂O₃. This presentation will highlight the research progress of the Nanjing University team in Ga₂O₃ UWBG semiconductor materials and devices, while also outlining key challenges in this frontier field.
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