Chun Zhao Ph.D.

Senior Associate Professor

Dr. Chun ZHAO (Gary) received his BEng degree in 2006 from Southeast University 東南大學 in Nanjing. He completed his MSc degree in 2007 at Hong Kong University of Science and Technology (HKUST).

From 2007 to 2009, Gary joined in a Hong Kong start-up technology company Minilogic as a development team member to be involved into IC design. He applied his expertise in CMOS analog and digital system architecture to enable the deployment of the world's first electronic cigarette with ASIC integrated core.

Gary was enrolled as a PhD student in University of Liverpool in 2009 and obtained the PhD degree in 2014. After graduation, he moved back to HKUST and was a senior research engineer in Nano and Advanced Materials Institute from 2014 to 2017. The research group, Gary used to work as a key staff member, is one of the most active teams in bridging academic and industry to implement technology commercialization. After three years of research experiences, he decided to return to academia full-time by joining EEE department in 2017.

His research covers a broad area in emerging electronic devices ranging from process development to device design, characterization, and application. Gary is the one of major contributors to 3 US patents. He has contributed to more than 150 peer-reviewed journal/conference papers/presentations and some of them have been cited by Nature Reviews Materials (76.67), Nature Materials (47.65), Nature Electronics (33.25), Nature Communication (17.69), Science Advance (14.95), Advanced Materials (32.08). He was the leading author/scientist of research work with highly cited among worldwide top 1% from ESI.

Gary is serving as the publication chair of The 17th & 18th IEEE International Conference on IC Design and Technology (ICICDT 2019 & 2021). He was nominated/awarded into the 2018 Jiangsu Province High-level Innovation and Entrepreneurship Talent Plan. From 2020 to 2022, Gary has been selected and awarded as Golden Reviewer for the IEEE Electron Devices Society upon his expertise in 3rd/4th genearation semiconductor.

The research group is seeking highly motivated PhD candidate who has solid background in EE, Materials Science, Chemistry, or other related fields. The interested applicant with strong motivation to perform cutting edge research is highly encouraged to contact me via chun.zhao@xjtlu.edu.cn or chunzhao@liverpool.ac.uk.


  • Ph.D., University of Liverpool, - 2014
  • MSc., Hong Kong University of Science and Technology, - 2007
  • BEng., Southeast University 東南大學, - 2006


  • Programme Director (EST), Xi'an Jiaotong-Liverpool University, School of Advanced Technology - 2022 to Present
  • Founding Programme Director, Xi’an Jiaotong-Liverpool University, School of Chips - 2019 to 2021
  • Senior Associate Professor, Xi'an Jiaotong-Liverpool University - 2023 to present
  • Associate Professor, Xi'an Jiaotong-Liverpool University - 2021 to 2023
  • Assistant Professor, Xi'an Jiaotong-Liverpool University - 2017 to 2021
  • Visiting Scholar, Hong Kong University of Science and Technology - 2014 to 2017
  • Senior Research Engineer, Nano and Advanced Materials Institute, Hong Kong University of Science and Technology - 2014 to 2017
  • IC Design Engineer, Minilogic Device Cooperation, Hong Kong Science Park - 2007 to 2009


  • 3rd/4th Generation Novel Semiconductor: Wide Bandgap Metal Oxide
  • Advanced Synaptic Electronic Devices and its Artificial Intelligence Application (AI Integrated Circuit)
  • Wearable Electronics with Integration of Bio-Sensors and TENG


  • **********************************Selected Publications from 2011**********************************
  • L Yin, C Z Ding, C G Liu, Chun Zhao*, W S Zha, I Z Mitrovic, E G Lim*, Y F Han, X M Gao, L P Zhang, H B Wang, Y X Li, S Wilken, R Österbacka, H Z Lin, C Q Ma*, C Z Zhao, A Multifunctional Molecular Bridging Layer for High Efficiency, Hysteresis‐Free, and Stable Perovskite Solar Cells, 13 (25), 2301161, Advanced Energy Materials (2023) {29.69, JCR Q1}
  • S Wang, Q Wang, M Li, Y Fang, S Shao, T Xie, Chun Zhao*, L Liang and J W Zhao*, Roll-to-roll gravure printed large-area flexible carbon nanotube synaptic photogating transistor arrays for image recognitions, 115, 108698, Nano Energy (2023) {19.06, JCR Q1}
  • Q Wang, Chun Zhao*, Y Sun, R Xu, C Li, C Wang, W Liu*, J Gu, Y Shi, L Yang, X Tu, H Gao and Z Wen*, Synaptic transistor with multiple biological functions based on metal-organic frameworks combined with the LIF model of a spiking neural network to recognize temporal information, 9, 1, 96, Microsystems & Nanoengineering (2023) {8, JCR Q1}
  • Q Wang, S Duan, J Qin, Y Sun, S Wei, P Song, W Liu*, J Gu, L Yang, X Tu, H Gao and Chun Zhao*, Dynamic residual deep learning with photoelectrically regulated neurons for immunological classification, 4, 7, Cell Reports Physical Science (2023) {8.9, JCR Q1}
  • Y Gao, H Zhang, B Song, Chun Zhao and Q Lu*, Electric Double Layer Based Epidermal Electronics for Healthcare and Human-Machine Interface, 13, 787, Biosensors (2023) {5.4, JCR Q1}
  • YX Cao, Chun Zhao*, L Yin, L M Shi, J B Zhou, Z Y Zhang, R Wu, Q Y Yang, M T Yuan and M Q Gu, Perovskite-based Optoelectronic Artificial Synaptic Thin-film Transistor, 108713, Solid-State Electronics (2023) {1.91, JCR Q2}
  • W Yuan, H Yuan, K Jiao, J Zhu, E G Lim*, I Mitrovic, S Duan, Y Wang, Y J Wang, S Cong, Chun Zhao, J Sun, X Y Liu* and P F Song*, Facile Microembossing Process for Microchannel Fabrication for Nanocellulose-Paper-Based Microfluidics, 15 (5), 6420-6430, ACS Applied Materials & Interfaces (2023) {10.38, JCR Q1}
  • T H Xie, Q N Wang, M Li, Y X Fang, S Y Wang, W B Gu, Chun Zhao*, M H Tang* and J W Zhao*, Carbon nanotube optoelectronic synapse transistor arrays with ultralow-power-consumption for stretchable neuromorphic vision systems, accepted, Advanced Functional Materials (2023) {19.92, JCR Q1}
  • D Chen, X Zhi, Y Xia, S Li, B Xi, Chun Zhao* and X Wang*, A Digital−Analog Bimodal Memristor Based on CsPbBr3 for Tactile Sensory Neuromorphic Computing, 2301196, Small (2023) {15.153, JCR Q1}
  • S H Tao, Q Zhang, S Pitie, C G Liu, Y Q Fan, Chun Zhao, M Seydou, Y J Dappe, R J Nichols and L Yang*, Revealing conductance variation of molecular junctions based on an unsupervised data analysis approach, 449, 142225, Electrochimica Acta (2023) {7.33, JCR Q1}
  • Y X Cao, T S Zhao, C G Liu, Chun Zhao*, H Gao, S C Huang, X Y Li, C B Wang, Y N Liu, E G Lim* and Z Wen*, Neuromorphic Visual Artificial Synapse In-memory Computing Systems based on GeOx-coated MXene Nanosheets, accepted, Nano Energy (2023) {19.06, JCR Q1}
  • H Lei, B H Lu, X H Liu, L J Xie, E G Lim, X Tu, Y N Liu, P X Zhang, Chun Zhao*, X H Sun*, and Z Wen*, Self-Assembled Porous-Reinforcement Microstructure-Based Flexible Triboelectric Patch for Remote Healthcare, accepted, Nano-Micro Letters (2023) {24.3, JCR Q1}
  • W W Yuan, H Yuan, K R Jiao, J Zhu, E G Lim, I Mitrovic, S X Duan, Y J Wang, S Cong, Chun Zhao, J Sun, X Y Liu and P F Song*, Facile Microembossing Process for Microchannel Fabrication for Nanocellulose-Paper-Based Microfluidics, accepted, ACS Applied Materials & Interfaces (2023) {10.38, JCR Q1}
  • X W Geng, C G Liu, Y Sun, Chun Zhao, Z J Jiang, E G Lim, Y J Wang, I Mitrovic, L Yang* and P F Song*, Sulfydryl-modified MXene as a sulfur host for highly stable Li-S batteries, 141877, Electrochimica Acta (2023) {7.33, JCR Q1}
  • Y X Cao, Chun Zhao*, T S Zhao, Y Sun, Z J Liu, X Y Li, L Yin, J M Gu, H Ren, X W Geng, J Yao, L X Kang*, Brain-Like Optoelectronic Artificial Synapse with Ultralow Energy Consumption Based on MXene Floating-Gate for Emotion Recognition, accepted, Journal of Materials Chemistry C (2023) {8.06, JCR Q1}
  • R W Yi, Y C Zhao, C G Liu, Y Sun, Chun Zhao, Y Q Li, L Yang*, C Z Zhao*, A Ti3C2Tx-Based Composite as Separator Coating for Stable Li-S Batteries, 12 (21), 3770, Nanomaterials (2022) {5.71, JCR Q1}
  • X K Xie, Y X Fang, C Lu, Y Tao, L Yin, Y B Zhang, Z X Wang, S Y Wang, J W Zhao, X Tu, X H Sun, E G Lim, Chun Zhao*, Y N Liu* and Z Wen*, Effective interfacial energy band engineering strategy toward high-performance triboelectric nanogenerator, 139469, Chemical Engineering Journal (2022) {16.74, JCR Q1}
  • C Z Ding, L Yin, J L Wang, V Larini, L P Zhang, R Huang, M Nyman, L Y Zhao, Chun Zhao, W S Li, Q Luo, Y B Shen, R Österbacka, G Grancini, C Q Ma*, Boosting Perovskite Solar Cells Efficiency and Stability: Interfacial Passivation of Crosslinked Fullerene Eliminates the “burn-in” Decay, 35 (2), 2207656, Advanced Materials (2022) {32.08, JCR Q1}
  • W Y Xu*, T Peng, L Chen, W C Huang, S M Zhuo, Q B Lin, Chun Zhao*, F Xu, Y Zhang and D L Zhu, Aqueous-solution-synthesized gallium oxide dielectrics for high-mobility thin-film transistors enhanced by phosphorus incorporation, 121, 16, 163301, Applied Physics Letters (2022) {3.97, JCR Q1}
  • W Y Xu *, T Peng, S M Zhuo, Q B Lin, W C Huang, Y J Li, F Xu *, Chun Zhao and D L Zhu, Aqueous solution-grown crystalline phosphorus doped indium oxide for thin-film transistors applications, 23 (21), 12912, International Journal of Molecular Sciences (2022) {6.208, JCR Q1}
  • J Y Li, Y X Cao, Z J Shen, X Tu, Chun Zhao*, Y N Liu* and Z Wen*, Artificial Synapses enabled neuromorphic computing: from Blueprints to Reality, 107744, Nano Energy (2022) {19.06, JCR Q1}
  • Q H Liu, L Yin, Chun Zhao*, J Y Wang, Z A Wu, H Lei, Y N Liu, B W Tian, Z Y Zhang, Z S Zhao, R F Liu, C Z Ding, Y F Han, C Q Ma, P F Song, I Z Mitrovic, E G Lim* and Zhen Wen*, Hybrid Mixed-Dimensional Perovskite/Metal-Oxide Heterojunction for All-in-One Opto-electric Artificial Synapse and Retinal-Neuromorphic System, 107686, Nano Energy (2022) {19.06, JCR Q1}
  • W Y Xu *, C Y Xu, Z B Zhang, C W Huang, Q B Lin, S M Zhuo, F Xu *, X K Liu, D L Zhu and Chun Zhao*, Water-induced nanometer-thin crystalline indium-praseodymium oxide channel layers for thin-film transistors, 12, 16, 2880, Nanomaterials (2022) {5.71, JCR Q1}
  • Q H Liu, L Yin, Chun Zhao*, Z A Wu, J Y Wang, X R Yu, Z X Wang, W X Wei, Y N Liu, I Z Mitrovic, L Yang, E G Lim* and C Z Zhao, All-in-One Metal-Oxide Heterojunction Artificial Synapses for Visual Sensory and Neuromorphic Computing Systems, 97, 107171, Nano Energy (2022) {19.06, JCR Q1}
  • Z J Shen, Chun Zhao*, L X Kang*, Y Sun, Y N Liu, I Z Mitrovic, L Yang, E G Lim, Z M Zeng and C Z Zhao, Emerging optical in-memory computing sensor (IMCS) synapses based on low-dimensional nanomaterials for neuromorphic networks, 2100236, Advanced Intelligent Systems (2022) {7.29, JCR Q1}
  • Y X Cao, T S Zhao, Chun Zhao*, Y N Liu, P F Song, H Gao, C Z Zhao, Advanced artificial synaptic thin-film transistor based on doped potassium ions for neuromorphic computing via third-generation neural network, 10 (8), 3196-3206, Journal of Materials Chemistry C (2022) {8.06, JCR Q1}
  • Q N Wang, T S Zhao, Chun Zhao*, W Liu*, L Yang, Y N Liu*, D Sheng, R X Xu, Y T Ge, X Tu, H Gao and C Z Zhao, Solid State Electrolyte Gate Transistor with Ion Doping for Bio-signal Classification of Neuromorphic Computing, 2101260, Advanced Electronic Materials (2022) {7.63, JCR Q1}
  • L Yin, C G Liu, C Z Ding, Chun Zhao*, I Z Mitrovic, E G Lim, H B Wang, Y Sun, Y F Han, Z R Li, L Yang, C Q Ma*, Cezhou Zhao, Functionalized-MXene-nanosheet-doped tin oxide enhances the electrical properties in perovskite solar cells, 100905, Cell Reports Physical Science (2022) {7.832, JCR Q1}
  • Q N Wang, Chun Zhao*, W Liu*, I Z Mitrovic, H van Zalinge, Y N Liu, C Z Zhao, Synaptic transistors based on transparent oxide for neural image recognition (invited paper), 108342, Solid-State Electronics (2022) {1.91, JCR Q2}
  • Y X Cao, Chun Zhao*, Z J Liu, X P Chen, I Z Mitrovic, YN Liu, L Yang, H van Zalinge and C Z Zhao, Bionic artificial synaptic floating gate transistor based on Mxene (invited paper), 108257, Solid-State Electronics (2022) {1.91, JCR Q2}
  • L J Xie, L Yin, Y N Liu*, H L Liu, B H Lu, Chun Zhao, T A Khattab, Z Wen* and X H Sun*, Interface Engineering for Efficient Raindrop Solar Cell, 16 (4), 5292-5302, ACS Nano (2022) {18.02, JCR Q1}
  • W Y Xu*, C Y Xu, L P Hong, F Xu, Chun Zhao, Y Zhang, M Fang, S Han, P J Cao, Y M Lu, W J Liu, D L Zhu, Aqueous Solution-Processed Nanometer-Thin Crystalline Indium Ytterbium Oxide Thin-Film Transistors, 12, 7, 1216, Nanomaterials (2022) {5.71, JCR Q1}
  • X P Chen, Y N Liu*, Y Sun, T S Zhao, Chun Zhao, T A Khattab, E G Lim, X H Sun and Z Wen*, Electron Trapping & Blocking Effect Enabled by MXene/TiO2 Intermediate Layer for Charge Regulation of Triboelectric Nanogenerators, 98, 107236, Nano Energy (2022) {19.06, JCR Q1}
  • W Y Xu*, P Tao, Y J Li, F Xu*, Y Zhang, Chun Zhao, M Fang, S Han, D L Zhu, P J Cao, W J Liu and Y M Lu, Water-processed ultrathin crystalline indium-boron-oxide channel for high-performance thin-film transistors applications, 12, 7, 1125, Nanomaterials (2022) {5.71, JCR Q1}
  • Y Q Fan, S Pitie, C G Liu, C Z Zhao, Chun Zhao, M Seydou, Y J Dappe, R J Nichols and L Yang*, Asymmetric Effect on the Length Dependence of Oligo (Phenylene ethynylene)-Based Molecular Junctions, 126 (7), 3635-3645, Journal of Physical Chemistry C (2022) {4.17, JCR Q1}
  • S H Tao, A Vezzoli, C Z Zhao, Chun Zhao, S Higgins, A Smogunov, Y J Dappe, R J Nichols and L Yang*, Electrochemical gating for single-molecule electronics with hybrid Au| graphene contacts, 24 (11), 6836-6844, Physical Chemistry Chemical Physics (2022) {3.94, JCR Q1}
  • X P Chen, J Y Li, Y N Liu*, J X Jiang, Chun Zhao*, C Z Zhao, E G Lim, X H Sun, Z Wen*, An Integrated Self-powered Real-time Pedometer System with Ultrafast Response and High Accuracy, 13 (51), 61789-61798, ACS Applied Materials & Interfaces (2021) {10.38, JCR Q1}
  • Y X Fang, W Y Xu, T S Zhao, I Z Mitrovic, L Yang, Chun Zhao* and C Z Zhao*, A promising method to improve the bias-stress and biased-radiation-stress stabilities of solution-processed AlOx thin films, 109899, Radiation Physics and Chemistry (2021) {2.77, JCR Q2}
  • X W Geng, C G Liu, Y Sun, Y C Zhao, R W Yi, P F Song, Chun Zhao, I Mitrovic, L Yang and C Z Zhao, A Ti3C2Tx MXene-carbon nanocage-sulfur cathode with high conductivity for improving the performance of Li-S batteries, 162586, Journal of Alloys and Compounds (2021) {6.37, JCR Q1}
  • T W Gao, C H He, C G Liu, Y Q Fan, C Z Zhao, Chun Zhao, W T Su, Y J Dappe and L Yang, Oligothiophene molecular wires at graphene-based molecular junctions, 23, 37, 21163, Physical Chemistry Chemical Physics (2021) {3.94, JCR Q1}
  • Y X Fang, Chun Zhao*, M Ivona and C Z Zhao*, High-performance and radiation-hardened solution-processed ZrLaO gate dielectrics for large area applications, 13, 42, 50101, ACS Applied Materials & Interfaces (2021) {10.38, JCR Q1}
  • X K Xie, Y F Chen, J X Jiang, J Y Li, Y Q Yang, Y N Liu, L Yang, X Tu, X H Sun, Chun Zhao*, M C Sun* and Z Wen*, Self-Powered Gyroscope Angle Sensor based on Resistive Matching Effect of Triboelectric Nanogenerator, 6, 10, 2100797, Advanced Materials Technologies, (2021) {8.85, JCR Q1} {Inside Cover}
  • T S Zhao, Chun Zhao*, W Y Xu, Y N Liu, H Gao, I Z Mitrovic, E G Lim, L Yang*, and C Z Zhao, Bio-inspired Photoelectric Artificial Synapse based on Two-Dimensional Ti3C2Tx MXenes Floating Gate, 31, 45, 2106000, Advanced Functional Materials (2021) {19.92, JCR Q1}
  • C Z Ding, L Yin, L P Zhang, R Huang, S Z Fan, Q Luo, J Lin, F S Li, Chun Zhao, R Osterbacka and C Q Ma, Revealing the catastrophic failure mechanism of n-i-p type perovskite solar cells under operating and the suppression method, 31, 40, 2103820, Advanced Functional Materials (2021) {19.92, JCR Q1}
  • T S Zhao, C G Liu, Chun Zhao*, W Y Xu, Y N Liu, I Z Mitrovic, E G Lim and C Z Zhao, High-Performance Solution-Processed Ti3C2Tx MXenes Doped ZnSnO Thin-Film Transistors via the Formation of a Two-Dimensional Electron Gas, 9, 32, 17390, Journal of Materials Chemistry A (2021) {14.51, JCR Q1}
  • Z J Shen, Chun Zhao*, Y N Liu, Y F Qi, I Z Mitrovic, L Yang, C Z Zhao, Performance Variation of Solution-processed Memristor Induced By Different Top Electrode, 186, 108132, Solid-State Electronics (2021) {1.91, JCR Q2} {Invited Paper}
  • H B Wang, Chun Zhao*, L Yin, X J Li, X Tu, E G Lim, Y N Liu, C Z Zhao, W-doped TiO2 as electron transport layer for high performance solution-processed perovskite solar cells, 150298, Applied Surface Science (2021) {7.39, JCR Q1}
  • Q H Liu, Chun Zhao*, T S Zhao, Y N Liu, I Z Mitrovic, W Y Xu, L Yang, C Z Zhao, Ecofriendly Solution-Combustion-Processed Thin-Film Transistors for Synaptic Emulation and Neuromorphic Computing, 13 (16), 18961, ACS Applied Materials & Interfaces (2021) {10.38, JCR Q1}
  • Z J Shen, Chun Zhao*, T S Zhao, W Y Xu, Y N Liu, Y F Qi, I Z Mitrovic, L Yang, C Z Zhao, Artificial Synaptic Performance with Learning Behavior for Memristor Fabricated with Stacked Solution-processed Switching Layers, 3, 1288, ACS Applied Electronic Materials (2021) {4.49, JCR Q1}
  • X K Xie, X P Chen, Chun Zhao*, Y N Liu, X H Sun, C Z Zhao and Z Wen*, Intermediate layer for enhanced triboelectric nanogenerator, 79, 105439, Nano Energy (2020) {19.06, JCR Q1}
  • Z J Shen, Chun Zhao*, Y F Qi, W Y Xu, Y N Liu, I Z Mitrovic, L Yang, C Z Zhao, Advances of RRAM Devices: Materials, Resistive Switching Mechanisms and Bionic Synaptic Application, 10 (8), 1437, Nanomaterials (2020) {5.71, JCR Q1}
  • X P Chen, X K Xie, Y N Liu, Chun Zhao, M Wen and Z Wen, Advances in Healthcare Electronics Enabled by Triboelectric Nanogenerators, 2004673, Advanced Functional Materials (2020) {19.92, JCR Q1}
  • Q H Liu, Chun Zhao*, I Z Mitrovic, W Y Xu, L Yang and C Z Zhao, Comproportionation Reaction Synthesis to Realize High-Performance Water-Induced Metal-Oxide Thin-Film Transistors, 6 (8), 2000072, Advanced Electronic Materials (2020) {7.63, JCR Q1}
  • Y W Li, Chun Zhao, D L Zhu, P J Cao, S Han, Y M Lu, M Fang, W J Liu and W Y Xu, Recent Advances of Solution-Processed Heterojunction Oxide Thin-Film Transistors, 10(5), 965, Nanomaterials (2020) {5.71, JCR Q1}
  • C H He, Q Zhang, T W Gao, C G Liu, Z Y Zhao, C Z Zhao, Chun Zhao, R Nichols, J Yannick and L Yang, Charge Transport in Hybrid Platinum/Molecule/Graphene Single Molecule Junctions, 22, 13498, Physical Chemistry Chemical Physics (2020) {3.94, JCR Q1}
  • Z J Shen, Chun Zhao*, Y F Qi, I Z Mitrovic, L Yang, J C Wen, Y B Huang, P Z Li and C Z Zhao, Memristive Non-volatile memory based on graphene materials, 11(4), 341, Micromachines (2020) {3.52, JCR Q1}
  • T S Zhao, Chun Zhao*, J F Zhang, I Z Mitrovic, E G Lim, L Yang, T Song and C Z Zhao, Enhancement on the performance of eco-friendly solution-processed InO/AlO thin-film transistors via lithium incorporation, 154458, Journal of Alloys and Compounds (2020) {6.37, JCR Q1}
  • Y F Qi, Z J Shen, Chun Zhao* and C Z Zhao, Effect of electrode area on resistive switching behavior in translucent solution-processed AlOx based memory device, 822, 153603, Journal of Alloys and Compounds (2019) {6.37, JCR Q1}
  • Y X Fang, Chun Zhao*, S Hall, I Z Mitrovic, W Y XU, L Yang, T S Zhao, Q H Liu and C Z Zhao*, Aqueous solution-processed AlOx dielectrics and their biased radiation response investigated by an on-site technique, 170, 108644, Radiation Physics and Chemistry (2019) {2.77, JCR Q2}
  • Y F Qi, Z J Shen, C Z Zhao*, I Z Mitrovic, W Y Xu, E G Lim, L Yang, J H He, T Luo, Y B Huang and Chun Zhao*, Resistive Switching Behavior of Solution-processed AlOx and GO based RRAM at Low Temperature, 107735, Solid-State Electronics (2019) {1.91, JCR Q2} {Invited Paper}
  • Y X Fang, Chun Zhao*, I Z Mitrovic, S Hall, L Yang and C Z Zhao*, Bias-stress stability and radiation response of solution-processed AlOx dielectrics investigated by on-site measurements, 217, 111113, Microelectronic Engineering (2019) {2.66, JCR Q2}
  • Z J Shen, Y F Qi, I Z Mitrovic, C Z Zhao, S Hall, L Yang, T Luo, Y B Huang and Chun Zhao*, Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric, 10(7), 446, Micromachines (2019) {3.52, JCR Q1}
  • C H He, Q Zhang, Y Q Fan, C Z Zhao, Chun Zhao, J Y Ye, Y Dappe, R Nichols and L Yang, Effect of Asymmetric Anchoring Groups on Electronic Transport in Hybrid Metal/Molecule/Graphene Single Molecule Junctions, 20, 1830, ChemPhysChem (2019) {3.52, JCR Q1}
  • Y F Qi, Chun Zhao*, C Z Zhao*, W Y Xu, Z J Shen, J H He, T S Zhao, Y X Fang, Q H Liu, R W Yi, L Yang, Enhanced Resistive Switching performance of Aluminum Oxide Dielectric with a Low Temperature Solution-processed Method, 158, 28-36, Solid-State Electronics (2019) {1.91, JCR Q2}
  • Q Zhang, S H Tao, Y Q, Fan, C Z Zhao, Chun Zhao, W T Su, Y Dappe, R Nichols and L Yang, Technical effects of molecule-electrode contacts in graphene-based molecular junctions,122(40), 23200-23207, Journal of Physical Chemistry C (2018) {4.17, JCR Q1}
  • S H Tao, Q Zhang, C H He, X F Lin, R C Xie, C Z Zhao, Chun Zhao, Y Dappe, R Nichols and L Yang, Graphene-contacted single molecular junctions with conjugated molecular wires, 2(1), 12-18, ACS Applied Nano Materials (2018) {6.14, JCR Q1}
  • J J Wang, D L Ren, Z C Zhang, H W Xiang, J H Zhao, Z Y Zhou, X Y Li, H Wang, L Zhang, M L Zhao, Y X Fang, C Lu, Chun Zhao, C Z Zhao and X B Yan, A radiation-hardening Ta/Ta2O5-x/Al2O3/InGaZnO4 memristor for harsh electronics, 113, 122907, Applied Physics Letters (2018) {3.97, JCR Q1}
  • C H He, Q Zhang, S H Tao, C Z Zhao, Chun Zhao, W T Su, Y J Dappe, R Nichols and L Yang, Carbon-Contacted Single Molecule Electrical Junctions, 5, 002877, Physical Chemistry Chemical Physics (2018) {3.94, JCR Q1}
  • W Y Xu, L Y Hu, Chun Zhao, L J Zhang, D L Zhu, P J Cao, W J Liu, S Han, X K Liu, F Jia, Y X Zeng and Y M Lu, Low Temperature Solution-Processed IGZO Thin-Film Transistors, 6, 5, Applied Surface Science (2018) {7.39, JCR Q1}
  • Q Zhang, C G Liu, S H Tao, R W Yi, W T Su, C Z Zhao, Chun Zhao, Y Dappe, R Nichols and L Yang, Fast and straightforward analysis approach of charge transport data in single molecule junctions, 29, 32, Nanotechnology (2018) {3.95, JCR Q1}
  • Y D Yuan, R W Yi, Y Sun, J Q Zeng, J Q Li, J H Hu, Y C Zhao, W Sun, Chun Zhao, L Yang and C Z Zhao, Porous activated carbons derived from pleurotus eryngii for supercapacitor applications, 7539509, Journal of Nanomaterials (2018) {3.79, JCR Q2}
  • Y F Qi, C Z Zhao, C G Liu, Y X Fang, J H He, T Luo, L Yang and Chun Zhao, Comparisons of switching characteristics between Ti/Al2O3/Pt and TiN/Al2O3/Pt RRAM devices with various compliance currents, 33, 4, Semiconductor Science and Technology (2018) {2.04, JCR Q1}
  • Y F Mu, Y X Fang, C Z Zhao, Chun Zhao, Q F Lu, Y F Qi, R Yi, L Yang, I Z Mitrovic, S Taylor and P R Chalker, Total Dose Effects and Bias Instabilities of (NH4) 2S Passivated Ge MOS Capacitors with HfxZr1-xOy Thin Films, 64, 12, IEEE Transactions on Nuclear Science (2017) {1.70, JCR Q1}
  • Q F Lu, Y F Qi, C Z Zhao, C G Liu, Chun Zhao, S Taylor and P R Chalker, Investigation of Anomalous Hysteresis in MOS Devices With ZrO2 Gate Dielectrics, 17, 3, IEEE Transactions on Device and Materials Reliability (2017) {1.76, JCR Q2}
  • Q F Lu, Y F Qi, C Z Zhao, Chun Zhao, S Taylor and P R Chalker, Capacitance-Voltage Characteristics Measured through Pulse Technique on High-k Dielectric MOS Devices, 11, 9, Vacuum (2017) {4.11, JCR Q2}
  • Y F Mu, C Z Zhao, Q F Lu, Chun Zhao, Y F Qi, S Lam, I Z Mitrovic, S Taylor and P R Chalker, Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements, 99, 1, IEEE Transactions on Nuclear Science (2017) {1.70, JCR Q1}
  • Y F Mu, C Z Zhao, Y F Qi, S Lam, Chun Zhao, Q F Lu, Y T Cai, I Z Mitrovic, S Taylor and P R Chalker, Real-Time and On-Site γ-Ray Radiation Response Testing System for Semiconductor Devices and its Applications, 372, 14, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms (2016) {1.27, JCR Q1}
  • Q F Lu, Y F Mu, J W Roberts, M Althobaiti, V R Dhanak, J J Wu, Chun Zhao, C Z Zhao, Q Zhang, L Yang, I Z Mitrovic, S Taylor, P R Chalker, Electrical Properties and Interfacial Studies of HfxTi1–xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates, 8, 8169, Materials (2015) {3.74, JCR Q1}
  • Q F Lu, Chun Zhao, Y F Mu, C Z Zhao, S Taylor and P R Chalker, Hysteresis in Lanthanide Zirconium Oxides Observed using a Pulse CV Technique and including the Effect of High Temperature Annealing, 8, 4829, Materials (2015) {3.74, JCR Q1}
  • Chun Zhao, C Z Zhao, Q F Lu, X Y Yan, S Taylor and P R Chalker, Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement, 7, 6965, Materials (2014) {3.74, JCR Q1}
  • Chun Zhao, C Z Zhao, S Taylor and P R Chalker, Review on Non-volatile Memory with High-k Dielectrics: Flash for Generation beyond 32nm, 7, 5117, Materials (2014) {3.74, JCR Q1}
  • Chun Zhao, C Z Zhao, M Werner, S Taylor and P R Chalker, Dielectric Relaxation of High-K Oxides, 8, 456, Nanoscale Research Letters (2013) {5.41, JCR Q1}
  • Chun Zhao, C Z Zhao, M Werner, S Taylor, P R Chalker and P J King, Grain Size Dependence of Dielectric Relaxation in Cerium Oxide as High-k Layer, 8, 172, Nanoscale Research Letters (2013) {5.41, JCR Q1}
  • Chun Zhao, C Z Zhao, Jing Tao, M Werner, S Taylor, and P R Chalker, Dielectric Relaxation of Lanthanide-Based Ternary Oxides: Physical and Mathematical Models, Article ID 241470, Journal of Nanomaterials (2012) {3.79, JCR Q2}
  • J Tao, C Z Zhao, Chun Zhao, P Taechakumput, M Werner, S Taylor and P R Chalker, Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements, 5, 1005, Materials (2012) {3.74, JCR Q1}
  • C Z Zhao, M Werner, S Taylor, P R Chalker, A C Jones and Chun Zhao, Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient, 6, 48, Nanoscale Research Letters (2011) {5.41, JCR Q1}


  • ******************************Selected Proceedings and Presentations from 2010*************************
  • Chun Zhao*, Bio-inspired Synaptic Transistor and its Application in Neuromorphic Computing, 2nd International Conference on Flexible and Printed Optoelectronic Materials and Devices, July 29-31, 2022, Changsha, China
  • Chun Zhao*, D Sheng, R X Xu and Q N Wang, Spiking Neural Networks for digital hand-written number recognition, 18th International SoC Conference (ISOCC 2020), Oct 19-22, 2022, Gangneung-si, Korea
  • J Y Li, Chun Zhao* and K L Man*, Neuromorphic Hardware Based on Artificial Synaptic Devices, 18th International SoC Conference (ISOCC 2020), Oct 19-22, 2022, Gangneung-si, Korea
  • G Avitabile*, A Florio, K L Man and Chun Zhao, A Long-Term Synchronized System for Healthcare, 18th International SoC Conference (ISOCC 2020), Oct 19-22, 2022, Gangneung-si, Korea
  • Chun Zhao*, T S Zhao, Y N Liu, C Z Zhao, Solution-processed Synaptic Thin-film Transistor for AI application (Invited Talk) 溶液法薄膜晶体管的人工智能突触可塑性应用(受邀报告), 2021海峡两岸暨港澳青年科学家智能可穿戴技术创新论坛, Oct 30-Nov 1, 2021, Suzhou, China
  • Y X Cao, Chun Zhao*, Y N Liu, L Yang, H V ZALINGE, C Z Zhao, Bioinspired mechano artificial synapse thin-film transistor, 7th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon, September 1-3, 2021, Caen, France
  • Q N Wang, Chun Zhao*, W Liu*, I Z Mitrovic, H V Zalinge, Y N Liu, C Z Zhao, Synaptic transistors based on transparent oxide for neural image recognition, 7th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon, September 1-3, 2021, Caen, France
  • Y X Fang, W Y Xu, I Z Mitrovic, L Yang, Chun Zhao*, and C Z Zhao, An Environmentally Friendly Solution-processed ZrLaO Gate Dielectric for Large-area Applications in the Harsh Radiation Environment, 18th International Conference on IC Design and Technology, September 15-17, 2021, Dresden, Germany
  • Chun Zhao*, T S Zhao, Y X Cao, Y N Liu, L Yang, I Z Mitrovic, E G Lim, and C Z Zhao, Advanced synaptic transistor device towards AI application in hardware perspective (Invited Talk), 18th International Conference on IC Design and Technology, September 15-17, 2021, Dresden, Germany
  • X K Xie, Chun Zhao*, Z Wen, 基于摩擦纳米发电机的自驱动可穿戴温度传感系统, Chinese Materials Conference (中国材料大会2021), July 8-12, 2021, Xiamen, China
  • X P Chen, Y N Liu*, Chun Zhao, Z Wen, 具有快速响应和高准确性的自供电实时计步器, Chinese Materials Conference (中国材料大会2021), July 8-12, 2021, Xiamen, China
  • Z J Shen, Chun Zhao*, I Z Mitrovic, Y N Liu, L Yang and C Z Zhao, Resistive Switching Performance of Memristor with Solution-processed Stacked MO/2D-Materials Switching Layers, 18th International Conference on IC Design and Technology, September 15-17, 2021, Dresden, Germany
  • Q H Liu, Chun Zhao*, Y N Liu, I Z Mitrovic, W Y Xu, L Yang and C Z Zhao, Water-induced Combustion-processed Metal-oxide Synaptic Transistor, 18th International Conference on IC Design and Technology, September 15-17, 2021, Dresden, Germany
  • T S Zhao, Chun Zhao*, Y N Liu, I Z Mitrovic, E G Lim and C Z Zhao, Solution-processed Synaptic Transistors Utilizing MXenes as Floating Gate, 18th International Conference on IC Design and Technology, September 15-17, 2021, Dresden, Germany
  • Y X Cao, Chun Zhao*, Y N Liu, L Yang, H V Zalinge and C Z Zhao, Bioinspired Mechano Artificial Synapse Thin-film Transistor, 18th International Conference on IC Design and Technology, September 15-17, 2021, Dresden, Germany
  • Q N Wang, Chun Zhao*, W Liu*, H V Zalinge, Y N Liu, L Yang and C Z Zhao, All-solid-state Ion Doping Synaptic Transistor for Bionic Neural Computing, 18th International Conference on IC Design and Technology, September 15-17, 2021, Dresden, Germany
  • Chun Zhao*, T S Zhao, Y N Liu, C Z Zhao, Research on the reliability of solution-processed thin-film transistors and its application on artificial intelligence synapse (Invited Talk) 溶液法薄膜晶体管可靠性研究及其人工智能突触应用 (受邀报告), 23rd National Conference on Semiconductor Physics (第二十三届全国半导体物理学术会议), Jul 8-11, 2021, Xi'an, China
  • Z J Shen, Chun Zhao*, Y N Liu, L Yang, C Z Zhao, Double-layer RRAM device based on solution-processed MXene 基于MXene的溶液法制双阻变层突触忆阻器, 23rd National Conference on Semiconductor Physics (第二十三届全国半导体物理学术会议), Jul 8-11, 2021, Xi'an, China
  • Y X Fang, W Y Xu, T S Zhao, L Yang, C Z Zhao*, Chun Zhao*, A Promising Method to Improve the Biased-Radiation-Stress Stabilities of Solution-Processed AlOx Thin Films 一种简单有效提高溶液法氧化铝器件偏压辐射稳定性的方法, 23rd National Semiconductor Physics Conference (第二十三届全国半导体物理学术会议), July 8-11, 2021, Xi'an, China
  • L Yin, Chun Zhao*, Y N Liu, C Z Zhao, Application of self-assembled MXene in perovskite solar cells 自组装MXene在钙钛矿太阳能电池中的应用, 23rd National Semiconductor Physics Conference (第二十三届全国半导体物理学术会议), July 8-11, 2021, Xi'an, China
  • H B Wang, Chun Zhao*, Y N Liu, C Z Zhao, Application of TiO2 through low-temperature solution processed in perovskite solar cells 低温二氧化钛制备及其在钙钛矿太阳能电池中的应用, 23rd National Semiconductor Physics Conference (第二十三届全国半导体物理学术会议), July 8-11, 2021, Xi'an, China
  • Q H Liu, Chun Zhao*, Y N Liu, C Z Zhao, Water-induced metal-oxide solid-state photonic synaptic transistor 水溶液法金属氧化物固态光感突触晶体管, 23rd National Semiconductor Physics Conference (第二十三届全国半导体物理学术会议), July 8-11, 2021, Xi'an, China
  • Z J Shen, Chun Zhao*, K L Man, Y N Liu, C Z Zhao, Long-term memory performance with learning behavior of artificial synaptic memristor based on stacked solution-processed switching layers, 2021 IEEE International Symposium on Circuits & Systems (ISCAS 2021), May 22-28, 2021, Daegu, Korea
  • Z J Shen, Chun Zhao*, L Yang and C Z Zhao, Bionic Sypantic Application of OxRRAM Devices, 17th International SoC Conference (ISOCC 2020), Oct 21-24, 2020, Yeosu, Korea
  • Z J Shen, Chun Zhao*, I Z Mitrovic, L Yang, J C Wen, Y B Huang, P Z Li and C Z Zhao, Resistive Switching Performance of Bilayer RRAM Device with Solution-based Dielectric, 6th joint EUROSOI – ULIS 2020 Conference, March 31-April 3, 2020, Normandy, France
  • T S Zhao, Chun Zhao*, I Z Mitrovic, E G Lim, L Yang, C H Qiu and C Z Zhao, Facile Route for Low-temperature Eco-friendly Solution Processed ZnSnO Thin-film Transistors, 2020 IEEE International Reliability Physics Symposium & 14th International Electrostatic Discharge Workshop (IRPS 2020), March 29-April 02, 2020, Grapevine, US
  • Chun Zhao*, C Z Zhao and T S Zhao, Solution Processed Metal Oxide in Emerging Electronic Devices (Invited), 13th International Conference on ASIC (ASICON 2019), Oct 29-Nov 1, 2019, Chongqing, China
  • Z J Shen, Chun Zhao*, C Z Zhao and L Yang, Resistive Switching Behavior of Solution-Processed AlOx based RRAM with Ni and TiN Top Electrode at Low Annealing Temperatures, 16th International SoC Conference (ISOCC 2019), Oct 6-9, 2019, Jeju, Korea
  • T Song, T S Zhao, Y X Fang, Chun Zhao, C Z Zhao and L Sang, Threshold Voltage Instabilities in Perpetual Switching of Low-Voltage Thin-Film Transistors with Solution-Processed In2O3 Channel Layer, 15th International Conference on Electron Devices and Solid-State Circuits 2019 (EDSSC), June 12-14, 2019, Xi’an, China
  • Y X Fang, Chun Zhao*, C Z Zhao, I Z Mitrovic, L Yang, W Y Xu, Bias-Stress Stability and Radiation Response of Solution-Processed AlOx Dielectrics Investigated by On-Site Measurements, Insulating Films on Semiconductors 2019 (INFOS), June 30-July 3, 2019, Cambridge, UK
  • T S Zhao, Chun Zhao*, C Z Zhao, W Y Xu, L Yang, I Z Mitrovic, S Hall, E G Lim and S C Yu, Solution Processed ZnSnO Thin-film Transistors with Peroxide- Aluminum Oxide Dielectric, 17th International Conference on IC Design and Technology 2019 (ICICDT), June 17-19, 2019, Suzhou, China
  • Q H Liu, Chun Zhao*, C Z Zhao, I Z Mitrovic, S Hall, W Y Xu, L Yang, E G Lim, Q N Wang, Y L Wei and Y X Cao, Plasma-Enhanced Combustion-Processed Al2O3 Gate Oxide for In2O3 Thin Film Transistors, 17th International Conference on IC Design and Technology 2019 (ICICDT), June 17-19, 2019, Suzhou, China
  • Z J Shen, Chun Zhao*, C Z Zhao, I Z Mitrovic, L Yang, W Y Xu, E G Lim, T Luo and Y B Huang, Characteristics of Ni/AlOx/Pt RRAM devices with various dielectric fabrication temperatures, 17th International Conference on IC Design and Technology 2019 (ICICDT), June 17-19, 2019, Suzhou, China
  • Y X Fang, T S Zhao, Chun Zhao*, C Z Zhao, I Z Mitrovic and L Yang, Enhanced Biased Radiation and Illumination Stress Stability of Solution-processed AlOx Dielectrics using Hydrogen Peroxide, 17th International Conference on IC Design and Technology 2019 (ICICDT), June 17-19, 2019, Suzhou, China
  • T Song, T S Zhao, Y X Fang, Chun Zhao*, C Z Zhao and L Sang, Nearly Reversible Threshold Voltage Shifts with Low-Voltage Bias Stress in Solution-Processed In2O3 Thin-Film Transistors, 3rd Electron Devices Technology and Manufacturing (EDTM) Conference 2019, March 12-15, 2019, Singapore
  • Y F Qi, C Z Zhao, Chun Zhao*, I Z Mitrovic, W Y Xu, L Yang, Z J Shen and J H He, Improved Resistive Switching Behavior in Solution-processed AlOx based resistive random access memory, 5th joint EUROSOI – ULIS 2019 Conference, April 1-3, 2019, Grenoble, France
  • Z J Shen, Chun Zhao*, C Z Zhao, I Z Mitrovic, L Yang, W Y Xu, E G Lim, T Luo and Y B Huang, Al/GO/Si/Al RRAM with Solution-processed GO dielectric at Low Fabrication Temperature, 5th joint EUROSOI – ULIS 2019 Conference, April 1-3, 2019, Grenoble, France
  • Q H Liu, Chun Zhao*, C Z Zhao, I Z Mitrovic, S Hall, W Y Xu, L Yang, E G Lim, Q N Wang, Y X Cao and Y L Wei, Fully Solution-Processed Sodium Doped ZnO Thin-Film Transistors via a Low-Temperature Aqueous Route, 5th joint EUROSOI – ULIS 2019 Conference, April 1-3, 2019, Grenoble, France
  • T S Zhao, Chun Zhao*, C Z Zhao, W Y Xu, L Yang, I Z Mitrovic, S Hall, E G Lim and S C Yu, Eco-Friendly, Low-temperature Solution-processed InO/AlO Thin-film Transistor with Li-incorporation, 5th joint EUROSOI – ULIS 2019 Conference, April 1-3, 2019, Grenoble, France
  • Chun Zhao*, G Y Zhou, C Z Zhao, L Yang, K L Man and E G Lim, Memristor-based Neuromorphic Implementations for Artificial Neural Networks, 15th International SoC Conference (ISOCC 2018), Nov 12-15, 2018, Daegu, Korea
  • Chun Zhao*, Z J Shen, G Y Zhou, C Z Zhao, L Yang, K L Man and E G Lim, Neuromorphic Properties of Memristor towards Artificial Intelligence, 15th International SoC Conference (ISOCC 2018), Nov 12-15, 2018, Daegu, Korea
  • Chun Zhao*, L Yang and C Z Zhao, Fully Printable Thin-Film Transistor Devices Based on Si Nanowires, 2018 Materials Research Society Fall (2018 MRS Fall), Nov 25-30, 2018, Boston, US
  • Chun Zhao*, C Z Zhao, L Yang and W Y Xu, Solution Processed Metal Oxide in Emerging Electronic Devices, 2018 IEEE 14th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Oct 31 - Nov 3, 2018, Qingdao, China
  • M Cui, Y T Cai, S Lam, W Liu, Chun Zhao, I Mitrovic, S Taylor, P Chalker and C Z Zhao, Characterization of Transient Threshold Voltage Shifts in Enhancement- and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs, 2018 IEEE International Conference on Electron Devices and Solid-state Circuits (EDSSC), June 6-8, 2018, Shenzhen, China
  • Y D Yuan, R W Yi, Y Sun, J Q Zeng, J Q Li, J H Hu, Y C Zhao, W Sun, Chun Zhao, L Yang, C Z Zhao, Facile Fabrication of Porous Carbon Materials Derived from Pleurotus Eryngii for Supercapacitor Electrodes, 2018 IEEE International Conference on Electron Devices and Solid-state Circuits (EDSSC), June 6-8, 2018, Shenzhen, China
  • Chun Zhao, H Xin, L Yang, S L Wu and C Z Zhao, Solution based Hybrid Nonvolatile Memory Devices with Silicon Nanoparticles as Charge Trapping Element, 2017 Materials Research Society Fall (2017 MRS Fall), Nov 26-Dec 1, 2017, Boston, US
  • Y F Qi, Chun Zhao, Y X Fang, Q F Lu, C G Liu, L Yang and C Z Zhao, Compliance Current Effect on Switching Behavior of Hafnium Oxide based RRAM, 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), July 4-7, 2017, Chengdu, China
  • Y F Qi, Y X Fang, Chun Zhao, Q F Lu, C G Liu, L Yang and C Z Zhao, Influence of HfAlO Composition on Resistance Ratio of RRAM with Ti electrode, 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), July 4-7, 2017, Chengdu, China
  • Y F Mu, C Z Zhao, Q F Lu, Chun Zhao, I Z Mitrovic, S Taylor, and P R Chalker, Total Ionizing Dose Response of HfxZr1-xOy Ge MOS Capacitors, 2017 International Workshop on Reliability of Micro- and Nano-Electronic Devices in Harsh Environment (IWRMN-EDHE 2017), May 22-24, 2017, Chengdu, China
  • Chun Zhao, X Wumaier, X H Chen and C M Sun, Fully Transparent and Printable Thin-Film Transistor Devices Based on Si Nanowires, 2016 Materials Research Society Fall (2016 MRS Fall), Nov 27-Dec 2, 2016, Boston, US
  • Y F Mu, C Z Zhao, Q F Lu, Chun Zhao, Y F Qi and S Lam, Effects of Biased Irradiation on Charge Trapping in HfO2 Dielectric Thin Films, 4th International Conference of the Advancement of Materials and Nanotechnology, Nov 9-11, 2016, Langkawi, Malaysia
  • Q F Lu, C Z Zhao, Chun Zhao, S Taylor and P R Chalker, Investigation of Anomalous Capacitance-Voltage Behavior Caused by Interface Dipoles and the Effect of Post-Metal-Annealing, 4th International Conference of the Advancement of Materials and Nanotechnology, Nov 9-11, 2016, Langkawi, Malaysia
  • Q F Lu, Y F Qi, C Z Zhao, Chun Zhao, S Taylor and P R Chalker, Anomalous Capacitance-Voltage Hysteresis in MOS Devices with ZrO2 and HfO2 Dielectrics, 5th International Symposium on Next-Generation Electronics (2016 ISNE), May 4-6, 2016, Hsinchu, China
  • Chun Zhao, C M Sun and H Wong, Hybrid Organic and Inorganic Nonvolatile Memory Devices with Silicon Nanoparticles as Charge Trapping Element, 2015 European Materials Research Society Spring (2015 EMRS Spring), May 11-15, 2015, Lille, France
  • Q F Lu, Y F Mu, Chun Zhao, C Z Zhao, S Taylor and P R Chalker, Lanthanum Doped Zirconium Oxides with Higher Dielectric Constant (invited), 6th Energy Materials Nanotechnology EAST (EMN EAST), May 12-15, 2014, Beijing, China
  • C Z Zhao, S Taylor, Chun Zhao and P R Chalker, Dielectric Relaxation in Lanthanide Doped/Based Oxides Used for High-k Layers (invited), 3rd International Conference on the Advancement of Materials and Nanotechnology (ICAMN), November 19-22, 2013, Penang, Malaysia
  • C Z Zhao, Chun Zhao, S Taylor and P R Chalker, Crystal Grain and Dielectric Relaxation of High-k Thin Film Deposited by ALD and MOCVD (invited), 5th Energy Materials Nanotechnology EAST (EMN EAST), September 7-10, 2013, Beijing, China
  • Chun Zhao, C Z Zhao, M Werner, S Taylor, P R Chalker and P J King, Impact of Cerium Oxide’s Grain Size for Dielectric Relaxation, 20th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), July 15-19, 2013, Suzhou, China
  • S Cheng, Chun Zhao, J J Wu and Y H Shi, Particle Swarm Optimization in Regression Analysis: A Case Study, 4th International Conference on Swarm Intelligence (ICSI), June 12-15, 2013, Harbin, China
  • C Z Zhao, J Tao, Chun Zhao, M Werner, S Taylor and P R Chalker, Dielectric Relaxation of Lanthanide-based Ternary Oxides (invited), 11th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), October 29-November 1, 2012, Xi’an, China
  • P F Wang, Chun Zhao, C Z Zhao and G Liu, Dielectric Relaxation Model in High-k Materials: Simplified Kohlrausch-Williams-Watts Function, 11th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), October 29-November 1, 2012, Xi’an, China
  • Chun Zhao, W Pan, C Z Zhao, K L Man, J Choi and J Chang, Performance-Effective Compaction of Standard Cell Library for Edge-triggered Latches Utilizing 0.5 Micron Technology, 8th International SoC Design Conference (ISOCC), November 17-18, 2011, Jeju, Korea
  • Chun Zhao, W Zhang, C Z Zhao, K L Man, J Ma, T T Jeong and J K Seon, Standard Cell Library Establishment and Simulation for Scan D Flip-Flops based on 0.5 Micron CMOS Mixed Signal Process, 8th International SoC Design Conference (ISOCC), November 17-18, 2011, Jeju, Korea
  • C Z Zhao, M Werner, S Taylor, P R Chalker, A C Jones, and Chun Zhao, Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient (invited), 3rd Collaborative Conference on Interacting Nanostructures (CCIN), April 19-23, 2010, San Diego, US
  • C Z Zhao, M Werner, S Taylor, P R Chalker, A C Jones and Chun Zhao, Effects of Lanthanide Doping on Dielectric Properties of Hafnia and Zirconia (invited), 3rd Collaborative Conference on Interacting Nanostructures (CCIN), April 19-23, 2010, San Diego, US


  • Invention Patent (发明专利): 201921399635.8, a flexible nanofilament zinc-tin oxide field effect transistor (一种柔性纳米纤维氧化锌锡的场效应晶体管)
  • Invention Patent (发明专利): 201921223481.7, A perovskite solar cell with high stability (一种高稳定性的钙钛矿太阳能电池)
  • Invention Patent (发明专利): 201920977069.8, A thin film transistor device which uses hydrogen peroxide to improve radiation resistance (一种用双氧水提高抗辐射性的薄膜晶体管器件)
  • Invention Patent (发明专利): 201920971159.6, A resistive random access memory (RRAM) doped with metal oxides (一种掺杂金属氧化物的阻变随机存取存储器)
  • Invention Patent (发明专利): 201920970572.0, A thin film transistor prepared by a plasma enhanced solution combustion method (一种等离子体增强型溶液燃烧法制备的薄膜晶体管)
  • Invention Patent (发明专利): 201920970530.7, A perovskite solar cell doped with fluorine and rubidium (一种氟和铷掺杂钙钛矿太阳能电池)
  • Invention Patent (发明专利): 201920491617.6, A thin film transistor based on a two-dimensional semiconductor material (一种基于二维半导体材料薄膜晶体管)
  • Invention Patent (发明专利): 201920491559.7, A CTM memory (一种CTM存储器)
  • Invention Patent (发明专利): 201920491530.9, A double oxide layer RRAM (一种双氧化层RRAM)
  • Invention Patent (发明专利): 201920491337.5, A metal oxide semiconductor capacitor based on hafnium silicate ( 一种基于硅酸铪的金属氧化物半导体电容器件)
  • Invention Patent (发明专利): 201920977069.8, A thin film transistor device which uses hydrogen peroxide to improve radiation resistance (一种用双氧水提高抗辐射性的薄膜晶体管器件)
  • Invention Patent (发明专利): 201920491294.0, A high performance thin film transistor based on nanometer cluster insulation layer (一种基于纳米簇绝缘层的高性能薄膜晶体管)
  • Invention Patent (发明专利): 201920490045.X, A double-layer metal oxide semiconductor heterojunction thin film transistor (一种双层金属氧化物半导体异质结薄膜晶体管)
  • Invention Patent (发明专利): 201920253119.8, Encapsulated solar cell (封装太阳能电池)
  • Invention Patent (发明专利): 201920252988.9, Micro - nano wire preparation device and micro - nano structure (微纳线制备装置及微纳结构)
  • Invention Patent (发明专利): 201911299513.6, A translucent RRAM based on biomaterials and its preparation method (一种基于生物材料的半透明RRAM及其制备方法)
  • Invention Patent (发明专利): 201911299283.3, Preparation of high permittivity insulating layer based on self ignition method (基于自燃烧法的双元高介电常数绝缘层的制备方法)
  • Invention Patent (发明专利): 201911299235.4, Flexible nanofiber GaSn oxide transistor based on nano cluster dielectric layer and its preparation method (基于纳米簇介电层的柔性纳米纤维氧化镓锡晶体管及其制备方法)
  • Invention Patent (发明专利): 201911299226.5, Transparent thin film transistor device based on zirconia and lanthanum oxide and its preparation method (基于氧化锆和氧化镧的透明薄膜晶体管器件及其制备方法)
  • Invention Patent (发明专利): 201911298995.3, Tungsten doped oxide perovskite solar cell and its preparation method (钨掺杂氧化物钙钛矿太阳能电池及其制备方法)
  • Invention Patent (发明专利): 201911049301.2, RRAM based on lanthanum oxide and its preparation method (基于镧氧化物RRAM及其制备方法)
  • Invention Patent (发明专利): 201910794979.7, A field effect transistor with flexible nanofiber and its preparation method (一种柔性纳米纤维氧化锌锡的场效应晶体管及其制备方法)
  • Invention Patent (发明专利): 201910735665.X, A table tennis training robot with visual recognition function (一种带有视觉识别功能的乒乓球陪练机器人)
  • Invention Patent (发明专利): 201910700597.3, A high stability solar cell (一种高稳定性太阳能电池)
  • Invention Patent (发明专利): 201910559817.5, A metal oxide doped resistive random access memory (一种掺杂金属氧化物的阻变式随机存储器)
  • Invention Patent (发明专利): 201910559729.5, A plasma enhanced solution combustion method (一种等离子增强溶液燃烧法)
  • Invention Patent (发明专利): 201910559719.1, A perovskite solar cell doped with fluorine and rubidium (一种氟和铷掺杂钙钛矿太阳能电池)
  • Invention Patent (发明专利): 201910559526.6, A thin film transistor with hydrogen peroxide to improve radiation resistance and its preparation method (一种利用双氧水提高抗辐射性的薄膜晶体管及制备方法)
  • Invention Patent (发明专利): 201910292559.9, A thin film transistor based on two dimensional semiconductor materials (一种基于二维半导体材料薄膜晶体管)
  • Invention Patent (发明专利): 201910292557.X, A double oxide layer RRAM and its preparation method (一种双氧化层RRAM及其制备方法)
  • Invention Patent (发明专利): 201910292547.6, A CTM memory and its preparation method (一种CTM存储器及其制备方法)
  • Invention Patent (发明专利): 201910292495.2, Double layer metal oxide semiconductor (双层金属氧化物半导体)
  • Invention Patent (发明专利): 201910291852.3, A metal oxide semiconductor based on chromium silicate (一种基于硅酸铬金属氧化半导体)
  • Invention Patent (发明专利): 201910291851.9, A double layer metal oxide semiconductor (一种双层金属氧化物半导体)
  • Invention Patent (发明专利): 201910291849.1, A high performance thin film transistor based on nano insulating layer and its preparation method (一种基于纳米族绝缘层的高性能薄膜晶体管及制备方法)
  • Invention Patent (发明专利): 201910149459.0, RRAM device based on graphene oxide and its preparation method (基于氧化石墨烯的RRAM器件及其制备方法)
  • Invention Patent (发明专利): 201910149261.2, Cesium Doped Perovskite solar cells (铯掺杂钙钛矿太阳能电池)
  • Invention Patent (发明专利): 201910149242.X, Micro/nano wire preparation device (微纳线制备装置)
  • Invention Patent (发明专利): 201811591079.4, Thin film transistor on flexible substrate and its preparation method (柔性衬底的薄膜晶体管及其制备方法
  • Invention Patent (发明专利): 201811589966.8, Metal oxide thin film transistor and its preparation method (金属氧化物薄膜晶体管及其制备方法)
  • Invention Patent (发明专利): 201810545996.2, A wireless charging system for electric vehicles (一种电动汽车的无线充电系统)
  • European Union Patent (2017): EP3125295, Hybrid Dielectric Non-volatile Memory with Nano Particles (Si/SiO2 Core/Shell) as Charge Trapping Layer
  • US Patent (2016): 9, 406, 765, Hybrid Dielectric Non-volatile Memory with Nano Particles (Si/SiO2 Core/Shell) as Charge Trapping Layer
  • Invention Patent (发明专利): ZL 201510618655.X, Non-volatile Memory with Nano Particles as Charge Trapping Layer and its Application


  • Chun Zhao, Development of IP Core of SAR ADC Chip Based on CMOS Technology, Enterprise Project Fund, Xi’an Jiaotong-Liverpool Technology Transfer Center, China, 2022 December (RP0037, RMB 1m)
  • Chun Zhao, Fabrication of metal oxide synaptic transistor by solution method and its application in neuromorphic system, Enterprise Project Fund, Xi’an Jiaotong-Liverpool University, China, 2023 January (RDS10120230030, RMB 500k)
  • Chun Zhao, Research and development of key technology of integrated circuit design module for embedded artificial intelligence chip, Key Program Special Fund, Xi’an Jiaotong-Liverpool University, China, 2019 January (RMB 1m)
  • Chun Zhao, Research and development of key technology of integrated circuit design module for embedded artificial intelligence chip, Enterprise Project Fund, Xi’an Jiaotong-Liverpool Technology Transfer Center, China, 2018 November (RMB 1m)
  • Chun Zhao, Research and Development of Embedded Artificial Intelligence Chip based on ARM Architecture, Key Program Special Fund, Xi’an Jiaotong-Liverpool University, China, 2017 July (RMB 1m)
  • Preparation and mechanism of triboelectronic nanogenerator based on High K metal oxides, Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, China, 2021 Dec (RMB 60k)
  • Chun Zhao, Reliability of Hafnium Oxide Dielectric Thin Film Transistor Devices Prepared by Solution Method, Natural Science Foundation of the Jiangsu Higher Education Institutions of China Programme, China, 2019 July (RMB 30k)
  • Chun Zhao, Reliability of solution processed gate dielectric thin-film transistor, Suzhou Science and Technology Development Planning Project: Key Industrial Technology Innovation, China, 2019 September (RMB 50k)
  • Chun Zhao, Nanoparticle Size Dependent Threshold Voltage Shifts In Non-Volatile Memory, Research Development Fund (RDF), Xi’an Jiaotong-Liverpool University, China, 2017 December (RMB 100k)
  • Chun Zhao, Study of Thin Film Transistors based on In-plane Growth of Silicon Nanowire, Guangdong Research Center for Interfacial Engineering of Functional Materials Open (Director) Fund, China, 2017 (RMB 20k)


  • 2022 till now, Editorial Board, Frontiers in Neuroscience {5.15, JCR Q1}
  • 2022 till now, Guest Editor, Nanomaterials {5.71, JCR Q1}
  • 2021, Publication Chair, The 18th IEEE International Conference on IC Design and Technology (ICICDT 2021)
  • 2019, Publication Chair, The 17th IEEE International Conference on IC Design and Technology (ICICDT 2019)
  • 2021 till now, Reviewer, Nature Electronics
  • 2021 till now, Reviewer, Small
  • 2020 till now, Reviewer, IEEE Electron Device Letters
  • 2020 till now, Reviewer, IEEE Transactions on Electronic Devices
  • 2020 till now, Reviewer, IEEE Symposium on Circuits and Systems (ISCAS)
  • 2018 till now, Technical Committee Member, University Research Center of Artificial Intelligence


  • EEE332 Micro and Nanomanufacturing Technology, Enrolled Students Numbers: 15 (2021), 36 (2022)
  • EEE112 Integrated Electronics and Design, Enrolled Students Numbers: 331 (2017), 290 (2018), 254 (2019), 280 (2020), 314 (2021), 432 (2022)
  • EEE118/MEC106 Engineering Drawing, Enrolled Students Numbers: 112 (2017), 92 (2018), 143 (2019), 155 (2020), 124 (2021)
  • EEE319 Optimization, Enrolled Students Numbers: 43 (2018), 53 (2019)
  • EEE216 Microsystem Processor, Enrolled Students Numbers: 101 (2017)


  • Qualified User in Micro and Nano Fabrication Laboratory (MNFL), Chinese University of Hong Kong, 2015
  • Qualified User in Materials Characterization and Preparation Facility (MCPF), Hong Kong University of Science and Technology, 2015
  • Qualified Non-CMOS User in Nanoelectronic Fabrication Facility (NFF), Hong Kong University of Science and Technology, 2014
  • Certificate in Training for Staff in Health, Safety and Environment Office, Chemical Safety I, Hong Kong University of Science and Technology, 2014
  • Certificate in Training for Staff in Health, Safety and Environment Office, Chemical Safety II, Hong Kong University of Science and Technology, 2014
  • Certificate in Training for Staff in Health, Safety and Environment Office, Pressure Safety, Hong Kong University of Science and Technology, 2014
  • Certificate in Training for Staff in Health, Safety and Environment Office, Electrical Safety, Hong Kong University of Science and Technology, 2014


  • Leading author/scientist of research work with highly cited among worldwide top 1% from ESI (2021)
  • The 2nd JITRI Innovation Cup (集萃创新杯) by Yangtze River Delta National Technological Innovation Center (长三角国家技术创新中心): 2nd Prize (National Level)
  • 2022 Royal Society of Chemistry Journal of Materials Chemistry C Oral Prize for International Conference (International)
  • 2021 IEEE Electron Device Letters Golden Reviewer (International)
  • 2020 IEEE Electron Device Letters Golden Reviewer (International)
  • The 21st National College Undergraduate Students Robotic Competition Robomaster 2022-Final Category: 1st Prize for Supervisor (National Level)
  • The 21st National College Undergraduate Students Robotic Competition Robomaster 2022-Final Sentinel Robot Category : 1st Prize for Supervisor (National Level)
  • The 21st National College Undergraduate Students Robotic Competition Robomaster 2022-Final Infantry Robot Category : 1st Prize for Supervisor (National Level)
  • The 21st National College Undergraduate Students Robotic Competition Robomaster 2022-Final Engineering Robot Category : 1st Prize for Supervisor (National Level)
  • The 21st National College Undergraduate Students Robotic Competition Robomaster 2022-Final Infantry Robot Category : 2nd Prize for Supervisor (National Level)
  • The 21st National College Undergraduate Students Robotic Competition Robomaster 2022-Final Hero Robot Category : 2nd Prize for Supervisor (National Level)
  • The 21st National College Undergraduate Students Robotic Competition Robomaster 2022-Final Air Robot Category : 3rd Prize for Supervisor (National Level)
  • The 21st National College Undergraduate Students Robotic Competition Robomaster 2022-Final Darts Robot Category : 3rd Prize for Supervisor (National Level)
  • The 21st National College Undergraduate Students Robotic Competition Robomaster 2022- Infantry racing and intelligent shooting Category: 3rd Prize for Supervisor (National Level)
  • The 21st National College Undergraduate Students Robotic Competition Robomaster 2022-East Region Category: 1st Prize for Supervisor (National Level)
  • The 21st National College Undergraduate Students Robotic Competition Robomaster 2022-East Region Single Category: 2nd Prize for Supervisor (National Level)
  • The 20th National College Undergraduate Students Robotic Competition Robomaster 2021-South Region Category: 2nd Prize for Supervisor (National Level)
  • The 20th National College Undergraduate Students Robotic Competition Robomaster 2021-Standard Racing and Smart Firing Final Category: 2nd Prize for Supervisor (National Level)
  • The 19th National College Undergraduate Students Robotic Competition Robomaster 2020-International Region Category: 2nd Prize for Supervisor (National Level)
  • The 18th National College Undergraduate Students Robotic Competition Robomaster 2019-International Region Category: 3rd Prize for Supervisor (National Level)
  • The 17th National College Undergraduate Students Robotic Competition Robomaster 2018-Southern Region Category: 3rd Prize for Supervisor (National Level)
  • Jiangsu Province High-level Innovation and Entrepreneurship Talent Plan (2018)
Chun Zhao