Register Event Details
- Time：11:00-11:30,29th June(Monday),2026
- Venue: XJTLU South Campus,IBSS Building-BS4114, 111 Ren'ai Road, Dushu Lake Higher Education Town, SIP, Suzhou, Jiangsu, China
- Language: Chinese(IFlytek translation provided)
- Host：XJTLU Advanced Semiconductor Research Centre(ASRC)
Invited speaker
Kailin Ren Doctor
Ren Kailin is the Deputy Dean of Qian Weichang College, Associate Professor and Doctoral Supervisor at the School of Microelectronics in Shanghai University. She is a member of the Technical Committee on Intelligent Image Sensing Microsystems under the China Society of Image and Graphics (CSIG). She received Ph.D. degree from the National University of Singapore and was selected into the Shanghai Overseas HighLevel Talent Introduction Program in 2021. Her research interests focus on GaN-based power device and power IC, and optoelectronic integration. Over the past five years, she has published more than 30 papers in journals including IEEE EDL and IEEE T-ED.
Abstract
P-GaN gate E-mode GaN power devices offer broad application prospects in fields such as power supplies in data center, electric vehicles, and photovoltaic inverters, owing to their advantages of high frequency and high-power density. To address the existing challenges concerning device model accuracy, threshold voltage instability, and short-circuit reliability, this report presents research progress on an improved QPZD model, a novel device structure design with high VTH stability, and mechanisms on its sub-microsecond short-circuit failure. Finally, this report introduces a novel optoelectronic monolithically integrated structure and its potential application scenarios.
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